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| savantic semiconductor product specification silicon npn power transistors 2SC3272 d escription with to-126 package high breakdown voltage applications for power amplification pinningsee fig.2 pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 5 v i c collector current 0.1 a i cm collector current-peak 0.2 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3272 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =50ma ;i b =5m a 2.0 v v (br)cbo collector-base breakdown voltage i c =10a;i e =0 300 v v (br)ceo collector-emitter breakdown voltage i c =1ma; i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =10a; i c =0 5 v h fe dc current gain i c =10ma ; v ce =10v 39 180 i cbo collector cut-off current v cb =200v; i e =0 0.5 a i ebo emitter cut-off current v eb =4v; i c =0 0.5 a c ob output capacitance i e =0; v cb =30v;f=1mhz 3 pf f t transition frequency i c =10ma ; v cb =30v 50 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC3272 package outline fig.2 outline dimensions |
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